XINKEHUI | SiC Wafer Specification Guide
Canonical website: https://sic.xinkehui.com/
Company: shanghai xinkehui new materails co.,ltd

PORTFOLIO REFERENCE
Source: authorized company profile, page 21.

2 inch: 50.8 +/- 0.3 mm; thickness 330 +/- 25 or 350 +/- 25 um.
3 inch: 76.2 +/- 0.3 mm; thickness 350 +/- 25 or 500 +/- 25 um.
4 inch: 100 +/- 0.5 mm; thickness 350 +/- 25 or 500 +/- 25 um.
6 inch: 150 +/- 0.5 mm; thickness 350 +/- 25 or 500 +/- 25 um.
8 inch: 200 mm nominal; thickness 350 +/- 25 or 500 +/- 25 um.
The 8 inch diameter tolerance is printed ambiguously ("+/- 03 mm").
Its intended numeric value is not interpreted in this guide.

Listed 4H-N / HPSI / 4H-SEMI. The 2 inch column also lists 6H-N / 6H-SEMI.
The profile lists 8 inch HPSI / 4H-SEMI, but the public overview lists
semi-insulating SiC only at 2-6 inch. Confirm 8 inch non-conductive formats.
Ra: <= 0.2 nm; measurement face and method to confirm.
Warp: <= 30 um (2-6 inch); <= 45 um (8 inch).
TTV: <= 10 um.
MPD: < 1 per square centimetre.
Finish options: CMP / MP.
Edge options: 45-degree bevel / C-shape; drawing to agree.
Grade options: production for MOSFET / SBD, research, dummy and seed.
Custom thickness requires feasibility review.

150 MM 4H-N CONDUCTIVE SUBSTRATE REFERENCE
Source: public XINKEHUI 6 inch conductive 4H-SiC product listing.
Diameter: 150.0 +/- 0.2 mm.
Thickness: 350 +/- 25 um.
Conductivity / dopant: N-type / nitrogen.
Resistivity: 0.015-0.028 ohm cm.
Surface orientation: 4 degrees toward [11-20] +/- 0.5 degree.
Finish: double-side CMP; Si-face epi-ready.
Ra: Si-face <= 0.2 nm; C-face <= 0.5 nm.
Primary flat: 47.5 +/- 2.0 mm; parallel to [11-20] +/- 5 degrees.
Packaging listed: single wafer or 25-wafer package.
Grade-specific defect and geometry limits must be agreed in writing.

The two references have different geometry limits. Do not combine them
into an assumed universal supply specification. The approved quotation,
inspection method and lot-specific documentation take precedence.
These substrate values do not define an epitaxial layer stack.

CRYSTAL REFERENCE
The authorized company introduction, page 8, lists 2-6 inch conductive
and semi-insulating SiC ingots and wafers.
Ingot length, mass, seed orientation and batch quality require review.

COMMERCIAL INFORMATION
No verified numeric price range or real-time stock level is published.
Prices, minimum order, current availability and delivery terms:
request a written quotation.

RFQ CHECKLIST
1. Application and intended process.
2. Polytype, conductive / semi-insulating type, grade and diameter.
3. Thickness, tolerance, target face, orientation, flat / notch.
4. Resistivity, polishing, roughness and defect acceptance criteria.
5. Quantity, required lot report, packaging, destination and deadline.

CONTACT
Email: risinn@xinkehui.cn
Phone / WhatsApp: +86 132 6287 9223
Office: Room 1805, Building 1, Wanda Mall, 1079 Dianshanhu Avenue,
Qingpu District, Shanghai, China.